AT-32011 |
RFQ for AT-32011 |
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| Technical/Catalog Information | AT-32011-BLKG |
| Vendor | Avago Technologies US Inc. |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 900MHz |
| Current - Collector (Ic) (Max) | 16mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 1mA, 2.7V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 5.5V |
| Gain | 9dB ~ 11dB |
| Power - Max | 150mW |
| Compression Point (P1dB) | 9dBm |
| Package / Case | SOT-143-4, TO-253-4 |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | AT 32011 BLKG AT32011BLKG |
| Product | Manufacturers | Pack | D/C |
| AT-32011 | - | SOT-143 | 05+ |
Features |
| • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation• 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA AT-32033: 1 dB NF, 12.5 dB GA• Characterized for End-Of- Life Battery Use (2.7 V)• SOT-23 and SOT-143 SMT Plastic Packages• Tape-And-Reel Packaging Option Available[1] |
|
Symbol |
Parameter |
Units |
Absolute Maximum[1] |
|
VEBO |
Emitter-Base Voltage |
V |
1.5 |
|
VCBO |
Collector-Base Voltage |
V |
11 |
|
VCEO |
Collector-Emitter Voltage |
V |
5.5 |
|
IC |
Collector Current |
mA |
32 |
|
PT |
Power Dissipation [2,3] |
mW |
200 |
|
Tj |
Junction Temperature |
°C |
150 |
|
TSTG |
Storage Temperature |
°C |
-65 to 150 |